Investigation of physical chemical and optoelectronic properties of MoTe2 FET
Keywords:
Photodetector, field-effect transistor, MoTe2, photocurrent gateAbstract
In this article, we explore the nature of photocurrent generation mechanisms in MoTe2 based field effect transistors (FETs) by using gate and bias-dependent photocurrent measurements. Our results reveal that the photocurrent signals at MoTe2-electrode junctions are mainly attributed to the gain photoconductor effect in the off-state and on-state. The photocurrent peak is distinguished from conventional MoTe2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the directional-dependent absorption of MoTe2 crystals.
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